2SA1567

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage- : VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for DC motor driver, chopper regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 35 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1567 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A ICBO Collector Cutoff Current VCB= -50V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE1 DC Current Gain IC= -6A ; VCE= -1V 2SA1567 MIN TYP. MAX UNIT -50 V -0.35 V -100 μA -100 μA 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented on...