MSM511666C

E2G0015-17-41 ¡ Semiconductor MSM511666C/CL ¡ Semiconductor This version: Jan. 1998 MSM511666C/CL Previous version: May 1997 65,536-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) DESCRIPTION The MSM511666C/CL is a 65,536-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511666C/CL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMOS process. The MSM511666C/CL is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP. The MSM511666CL (the low-power version) is specially designed for lower-power applications. FEATURES 65,536-word ¥ 16-bit configuration Single 5 V power supply, ± 10% tolerance Input : TTL compatible, low input capacitance Output : TTL compatible, 3-state Refresh : 256 cycles/4 ms, 256 cycles/32 ms (L-version) Byte write and fast page mode with EDO, read modify write capability CAS before RAS refresh, hidden refresh, RAS-only refresh capability Package options: 40-pin 400 mil plastic SOJ (SOJ40-P-400-1.27) (Product : MSM511666C/CL-xxJS) 44/40-pin 400 mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM511666C/CL-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM511666C/CL-60 MSM511666C/CL-70 Access Time (Max.) tRAC tAA tCAC tOEA 60 ns 30 ns 20 ns 20 ns 70 ns 35 ns 20 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 110 ns 120 n...