Switching
SST112 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST112
This n-channel JFET is optimised for low no...
Description
SST112 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST112
This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX SST112 LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage Temperature ‐55°C to +150°C SST112 Benefits: Operating Junction Temperature ‐55°C to +135°C Short Sample & Hold Aperture Time Maximum Power Dissipation Low insertion loss Continuous Power Dissipation 350mW Low Noise MAXIMUM CURRENT SST112 Applications: Gate Current (Note 1) 50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = ‐35V Choppers Gate to Source Voltage VGSS = ‐35V SST112 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐35 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐5 VDS = 5V, ID = 1µA V VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 5 ‐‐ ‐‐ mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐0.005 ‐1 nA VGS = ‐15V, VDS = 0V IG Gate Op...
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