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2N3956

Micross

MONOLITHIC DUAL N-CHANNEL JFET

2N3956 MONOLITHIC DUAL N-CHANNEL JFET The 2N3956 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3956 f...


Micross

2N3956

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Description
2N3956 MONOLITHIC DUAL N-CHANNEL JFET The 2N3956 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3956 family are matched JFET pairs for differential amplifiers. The 2N3956 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The 2N3956 family also exhibits low capacitance - 6pF max and a spot noise figure of -0.5dB max. The part offers a superior tracking ability. The hermetically sealed TO-71 and TO-78 packages are well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES  LOW DRIFT  LOW LEAKAGE  LOW NOISE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP.  en = 10nV/√Hz TYP.  2N3956 Applications: ƒ ƒ Wideband Differential Amps High Input Impedance Amplifiers Maximum Temperatures  Storage Temperature  ‐65°C to +200°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  60V  ‐VDSO  Drain to Source Voltage  60V  ‐IG(f)  Gate Forward Current  50mA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 400mW @ 25°C    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.  DRIFT VS.  50  µV/°C  VDG=20V, ID=200µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.  OFFSET VOL...




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