BSC252N10NSFG

BSC252N10NSF G OptiMOS™2 Power-Transistor Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 25.2 40 V mΩ A www.DataSheet4U.com Low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Type BSC252N10NSF G Package PG-TDSON-8 Marking 252N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=40 A, R GS=25 Ω Value 40 25 7.2 160 68 ±20 78 -55 ... 150 55/150/56 mJ V W °C Unit A Rev. 2.08 page 1 2009-11-04 BSC252N10NSF G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC bottom top Thermal resistance, junction - ambient R thJA minimal footprint 6 cm2 cooling area 2) 1.6 18 62 50 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR...