Power MOSFET
Power MOSFET
IRFP460A, SiHFP460A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Description
Power MOSFET
IRFP460A, SiHFP460A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
105 26 42 Single
0.27
D
TO-247
G
S
D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
Low Gate Charge Qg Results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
Fully Characterized Capacitance and Avalanche Voltage and Current
Effective Coss Specified Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power Switching
TYPICAL SMPS TOPOLOGIES Full Bridge PFC Boost
TO-247 IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 4.3 mH, Rg = 25 Ω, IAS = 20 A (s...
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