SPP21N50C3

SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP P G-TO262 560 0.19 21 PG-TO220 V Ω A Type SPP21N50C3 SPI21N50C3 SPA21N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4565 Q67040-S4564 SP000216364 Marking 21N50C3 21N50C3 21N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C www.DataSheet4U.net Symbol SPP_I ID 21 13.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt page 1 Value SPA Unit A 211) 13.11) 63 690 1 21 ±20 ±30 34.5 15 W °C V/ns 2009-12-22 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=10A, VDD=50V 63 690 1 21 ±20 ±30 208 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt Rev. 3.2 7) A V -55...+150 SPP21N50C3 SPI21N50C3, SPA21N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambi...