Document
Preliminary data
SPI21N10 SPP21N10,SPB21N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 80 21
P-TO220-3-1
V m A
Type SPP21N10 SPB21N10 SPI21N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4116 Q67042-S4102 Q67042-S4117
Marking 21N10 21N10 21N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 21 15.0
Unit A
Pulsed drain current
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ID puls EAS dv/dt VGS Ptot Tj , Tstg
84 130 6 ±20 90 -55... +175 55/175/56 mJ kV/µs V W °C
TC=25°C
Avalanche energy, single pulse
ID =21 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =21A, VDS =80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-31
Preliminary data
SPI21N10 SPP21N10,SPB21N10
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
F)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 1.7 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = VDS
ID = 44 µA
Zero gate voltage drain current
VDS =100V, VGS=0V, Tj =25°C VDS =100V, VGS=0V, Tj =125°C
µA 0.01 1 1 65 1 100 100 80 nA m
Gate-source leakage current
VGS =20V, VDS =0V
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Drain-source on-state resistance
VGS =10V, ID =15.0A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Page 2
2002-01-31
Preliminary data
SPI21N10 SPP21N10,SPB21N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD =50V, VGS =10V, ID =21A, RG =13 VDS 2*ID*RDS(on)max , ID =15.0A VGS =0V, VDS=25V, f=1MHz
Symbol
Conditions min. 6.5 -
Values typ. 12.4 650 140 80 10 56 37 23 max. 865 186 120 15 84 55 35
Unit
S pF
ns
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =80V, ID =21A, VGS =0 to 10V VDD =80V, ID =21A
-
3.9 15.5 28.9 6.2
5.2 23.3 38.4 -
nC
V(plateau) VDD =80V, ID=21A
V
Reverse Diode Inverse diode continuous
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IS ISM VSD trr Qrr
TC=25°C
-
0.94 65 153
21 84 1.25 81.5 192
A
forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge
VGS =0V, IF =21A VR =50V, IF =lS , diF /dt=100A/µs
V ns nC
Page 3
2002-01-31
Preliminary data
SPI21N10 SPP21N10,SPB21N10
1 Power dissipation
Ptot = f (TC )
100
SPP21N10
2 Drain current
ID = f (TC )
parameter: VGS 10 V
24
SPP21N10
W
A
20 18
80 70
Ptot
16 60 50 40 30 20 4 10 0 0 2 20 40 60 80 100 120 140 160 °C 190 0 0 20 40 60 80 100 120 140 160 °C 190
ID
14 12 10 8 6
TC
TC
3 Safe operating area
ID = f ( VDS )
4 Transient thermal impedance
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
10
2 SPP21N10 tp = 6.8µs 10 µs
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parameter : D = tp /T
10 1
SPP21N10
K/W
A
10 0
/I
D
100 µs
ID
=V
DS
10 1
Z thJC
1 ms
R
DS
(on )
10 -1
D = 0.50
10 ms
10
-2
0.20 0.10
10
0
DC 10 -3 single pulse
0.05 0.02 0.01
10 -1 -1 10
10
0
10
1
10
2
V
10
3
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2002-01-31
Preliminary data
SPI21N10 SPP21N10,SPB21N10
5 Typ. output characteristic
ID = f (VDS ); Tj=25°C
6 Typ. drain-source on resistance
RDS(on) = f (ID )
parameter: tp = 80 µs
50
e d
parameter: VGS
VGS[V]= a= 5.6 b= 6.0 c= 7.0 d= 8.0 e= 10.0
c
m
260
a
b
c
d
A
220 200
RDS(on)
180 160 140 120
ID
30
20
b a
100
e
80 10 60 40 20 0 0 5 10
VGS[V]= a= 5.6 b= 6.0
5 10 15
c= 7.0 d= 8.0 e= 10.0
20 25 30 35 40
V
20
0 0
A
50
VDS
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs
30
8 Typ. forward transconductance
gfs = f(ID ); Tj=25°C
parameter: gfs
14
S
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A
12 11 10
g fs
3 4 5 6 8
20
ID
9 8
15
7 6
10
5 4 3
5
2 1
0 2
V
0 0
4
8
12
16
A
24
VGS
Page 5
ID
2002-01-31
Preliminary data
SPI21N10 SPP21N10,SPB21N10
9 Drain-source on-state resistance
RDS(on) = f (Tj )
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter : ID = 15.0 A, VGS = 10 V
340
SPP21N10
parameter: VGS = VDS
4
m
280
V
RDS(on)
240
VGS(th)
200 160
3
ID =0.25mA
.