TSM2N7000
TSM2N7000
60V N-Channel MOSFET
SOT-92
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 ...
Description
TSM2N7000
60V N-Channel MOSFET
SOT-92
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 5 @ VGS = 10V
ID (mA)
500
Features
● ● Fast Switching Speed Low Input and Output Leakage
Block Diagram
Application
● ● Direct Logic-Level Interface: TTL/CMOS Solid-State Relays
Ordering Information
Part No.
TSM2N7000CT B0 TSM2N7000CT A3
Package
TO-92 TO-92
Packing
1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
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Symbol
VDS VGS ID IDM
a,b o o
Limit
60 ±20 200 500 500 350 280 +150 -55 to +150
Unit
V V mA mA mA mW
o o
Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 75 C
IS PD TJ TJ, TSTG
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
TL RӨJA
Limit
10 357
Unit
S
o
C/W
1/4
Version: A07
TSM2N7000
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Volta...
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