BFU760F

BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits „ Low noise high linearity RF transistor „ High maximum output third-order intercept point 32 dBm at 1.8 GHz „ 110 GHz fT silicon germanium technology 1.3 Applications „ „ „ „ „ „ „ „ www.DataSheet4U.net Ka band oscillators DRO’s High linearity applications Medium output power applications Wi-Fi / WLAN / WiMAX GPS ZigBee SDARS first stage LNA LTE, cellular, UMTS NXP Semiconductors BFU760F NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. VCBO VCEO VEBO IC Ptot hFE CCBS fT Gp(max) NF IP3 Quick reference data Conditions open emitter open base open collector Tsp ≤ 90 °C IC = 10 mA; VCE = 2 V; Tj = 25 °C VCB = 2 V; f = 1 MHz IC = 50 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 °C IC = 50 mA; VCE = 1 V; f = 2.4 GHz; Tamb = 25 °C IC = 12 mA; VCE = 2 V; f = 2.4 GHz; ΓS = Γopt IC = 30 mA; VCE = 2.5 V; ZS = ZL = 50 Ω; f = 2.4 GHz; Tamb = 25 °C [2] [1] Symbol Parameter collector-base voltage collector-emitter voltage emitter-base vol...