BFU730F

BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits „ „ „ „ Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ 2nd LNA stage and mixer stage in DBS LNB’s Low noise amplifiers for microwave communications systems Ka band oscillators DRO’s Low current battery equipped applications Microwave driver / buffer applications Wi-Fi / WLAN / WiMAX GPS RKE AMR ZigBee LTE, cellular, UMTS SDARS first stage LNA FM radio Mobile TV Bluetooth www.DataSheet4U.net NXP Semiconductors BFU730F NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. VCBO VCEO VEBO IC Ptot hFE CCBS fT Gp(max) NF PL(1dB) Quick reference data Conditions open emitter open base open collector Tsp ≤ 90 °C IC = 2 mA; VCE = 2 V; Tj = 25 °C VCB = 2 V; f = 1 MHz IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C IC = 17 mA; VCE = 2 V; f = 12 GHz; Tamb = 25 °C IC = 5 mA; ...