BFU730F
NPN wideband silicon germanium RF transistor
Rev. 1 — 29 April 2011 Product data sheet
1. Product profile
1.1 G...
BFU730F
NPN wideband silicon germanium RF
transistor
Rev. 1 — 29 April 2011 Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave
transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
Low noise high gain microwave
transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s Low noise amplifiers for microwave communications systems Ka band oscillators DRO’s Low current battery equipped applications Microwave driver / buffer applications Wi-Fi / WLAN / WiMAX GPS RKE AMR ZigBee LTE, cellular, UMTS SDARS first stage LNA FM radio Mobile TV Bluetooth
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NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF
transistor
1.4 Quick reference data
Table 1. VCBO VCEO VEBO IC Ptot hFE CCBS fT Gp(max) NF PL(1dB) Quick reference data Conditions open emitter open base open collector Tsp ≤ 90 °C IC = 2 mA; VCE = 2 V; Tj = 25 °C VCB = 2 V; f = 1 MHz IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C IC = 17 mA; VCE = 2 V; f = 12 GHz; Tamb = 25 °C IC = 5 mA; ...