Document
DSEP 8-06B
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 10 A VRRM = 600 V trr = 30 ns
A C
VRSM V 600
VRRM V
Type
TO-220 AC
C
600
DSEP 8-06B
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 125°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 35 10 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C W Nm g
Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
TC = 25°C mounting torque typical
60 0.4...0.6 2
Symbol IR ①
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C
Characteristic Values typ. max. 60 0.25 1.66 2.66 2.5 0.5 µA mA V V K/W K/W ns 2.4 A
VF ② RthJC RthCH trr IRM
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C
30
Dimensions see Outlines.pdf
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified:
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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DSEP 8-06B
30 A 25 IF TVJ = 150°C 20 15 10 5 0 0 1 2 VF TVJ = 25°C 3 V 50 2 TVJ = 100°C 100 250 nC 200 Qr 150 TVJ = 100°C VR = 300 V IRM IF = 5 A IF = 10 A IF = 20 A 4 TVJ = 100°C VR = 300 V 6 10 A 8 IF = 5 A IF = 10 A IF = 20 A
0 100
A/µs 1000 -diF/dt
0 0 200 400
µs 1000 600 A/ 800 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
ns 100 TVJ = 100°C VR = 300 V
Fig. 3 Peak reverse current IRM versus -diF/dt
60 V VFR TVJ = 100°C IF = 10 A 0.3 µs tfr 0.2
2.0
1.5 Kf
trr 80 IF = 5 A IF = 10 A IRM 60 IF = 20 A
40
1.0
20 VFR
0.5 Qr 0.0 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/ µs 1000 40 0 0
tfr
0.1
200
400
0.0 µs 1000 600 A/ 800 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
10 K/W 1 ZthJC 0.1
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.5578 0.4931 ti (s) 0.0052 0.0003 0.0169
0.01
0.001 0.00001
DSEP 8-06B
NOTE: Fig. 2 to Fig. 6 shows typical values
0.0001
0.001
0.01
0.1 t
s
1
Fig. 7 Transient thermal resistance junction to case
418
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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