UNISONIC TECHNOLOGIES CO., LTD 9015
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
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UNISONIC TECHNOLOGIES CO., LTD 9015
Preliminary
PNP EPITAXIAL SILICON
TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
* High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9014
ORDERING INFORMATION
Ordering Number Lead Free 9015L-x-T92-B 9015L-x-T92-K 9015L-x-T92-T Halogen Free 9015G-x-T92-B 9015G-x-T92-K 9015G-x-T92-T Package TO-92 TO-92 TO-92 Packing Tape Box Bulk Tape Reel
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QW-R201-032,Ba
9015
Preliminary
PNP EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Collector Dissipation PC 450 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE Cob fT NF TEST CONDITIONS IC = -100μA, IE = 0 IC = -1mA, IB = 0 IE = -100μA, IC = 0 IC = -100mA, IB = -5mA IC = -100mA, IB = -5mA VCE = -5V, IC = -2mA VCB = -50V, IE =0 VEB = -5V, IC =0 VCE =-5V, IC = -1mA VCB = -10V, IE =0, f =1MHz VCE = ...