N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 18N40
400V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 18N40 is a 400V N-...
Description
UNISONIC TECHNOLOGIES CO., LTD 18N40
400V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications.
FEATURES
* RDS(ON) ≤ 408mΩ @VGS = 10 V * Ultra Low Gate Charge: 50nC (TYP.) * Low Reverse Transfer ( CRSS = typical 23pF ) * Fast Switching Speed * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen-Free 18N40L-T47-T 18N40G-T47-T Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube
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www.unisonic.com.tw
1 of 3 QW-R502-389.A
Copyright © 2010 Unisonic Technologies Co., Ltd
18N40
ABSOLUTE MAXIMUM RATINGS
(TC =25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage
Power MOSFET
SYMBOL RATINGS UNIT VDSS 400 V VGSS ±30 V Continuous ID 18 A Drain Current Pulsed IDM 45 A Avalanche Current IAR 18 A Single Pulsed EAS 1000 mJ Avalanche Energy 30 mJ Repetitive EAR Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 360 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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