Dual N-Channel MOSFET
UNISONIC TECHNOLOGIES CO., LTD 12NN10
2.5A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 12NN...
Description
UNISONIC TECHNOLOGIES CO., LTD 12NN10
2.5A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
* Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
12NN10G-S08-R
12NN10G-S08-R
SOP-8
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 1 2 3 4 5, 6 7, 8 S1 G1 S2 G2 D2 D1
Packing Tape Reel
12NN10G-S08-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) S08: SOP-8
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
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1 of 7
QW-R502-506.F
12NN10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous(Note 3) Pulsed(Note 2)
ID IDM
2.5 10
A A
Power Dissipation
PD 2 W
Junction Temperature
TJ
-40 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is ...
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