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10N75

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 10N75 Preliminary 10A, 750V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N75 is a N...


Unisonic Technologies

10N75

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Description
UNISONIC TECHNOLOGIES CO., LTD 10N75 Preliminary 10A, 750V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N75 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N75 is universally applied in high efficiency switch mode power supply, active power faction correction, electronic lamp based on half bridge topology. Power MOSFET 1 TO-220 1 TO-220F 1 TO-220F1 „ FEATURES * RDS(on)=1.3Ω @VGS=10V * High switching speed * Improved dv/dt capability * 100% avalanche tested „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N75L-TA3-T 10N75G-TA3-T 10N75L-TF3-T 10N75G-TF3-T 10N75L-TF1-T 10N75G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-220F1 S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-501.b 10N75 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 750 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 10 A 40 A Avalanche Current (Note 2) IAR 10 A Avalanch...




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