DE275X2-102N06A

Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 1000 V 6A 2.0 Ω 750 W The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. Unless noted, specifications are for each output device Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS (1) (1) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C Maximum Ratings 1000 1000 ±20 ±30 6 48 6 20 5 >200 750 5.0 0.17 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W K/W °C °C °C °C g SG1 SD1 SD2 SG2 GATE 1 GATE 2 DRAIN 1 DRAIN 2 Features PDAMB Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power − − cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances RthJHS (1) TJ TJM Tstg TL Weight Symbol Test Conditions 1.6mm (0.063 in) fro...