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DE275-501N16A

Part Number	DE275-501N16A
Manufacturer	IXYS Corporation
Description	RF Power MOSFET
Published	Apr 28, 2011
Detailed Description	Directed Energy, Inc. An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode...
Datasheet	DE275-501N16A PDF File

Overview

Directed Energy, Inc.
An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB RthJHS TJ TJM Tstg TL Weight Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified 1.
6mm (0.
063 in) from case for 10 s VDSS ID25 RDS(on) PDHS Maximum Ratings 500 500 ±20 ±30 16 98 16 20 5 >200 375 3.
0 0.
33 -55…+150 150 -55…+150 300 2 V V V V A A A mJ V/ns V/ns W W K/W °C °C °C °C g Features SG1 SG2 GATE = = = = 500 V 16 A .
5 Ω 375 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc ...

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DE275-501N16A RF Power MOSFET - IXYS Corporation

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