MA3DF40

This product complies with RoHS Directive (EU 2002/95/EC). Fast Recovery Diodes (FRD) MA3DF40 Silicon Mesa type For high frequency rectification For plasma display panel drive  Package  Features  Code  High switching speed trr TO-220D-A1  Soft recovery  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit  Pin Name 1: Anode 2: Cathode 3: Anode / Repetitive peak reverse voltage VRRM 370 V  Marking Symbol: MA3DF40 Non-repetitive peak reverse surge voltage VRSM 430 V e pe) Forward current TC = 25°C IF 20 A c e. d ty Non-repetitive peak forward surge current * IFSM 100 A n d stag tinue Junction temperature Tj –40 to +150 °C a e cle con Storage temperature Tstg –40 to +150 °C lifecy , dis Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Intemal Connection 1 2 3 ten tinufour Prondtiuncuted typed  Electrical Characteristics Ta = 25°C±3°C wing disco Parameter Symbol Conditions Min Typ Max in n follo ned Forwardvoltage VF IF = 20 mA 1.2 1.4 des , pla Reverse current IRRM VRRM = 370 V 10 a coed incluce type Reverse recovery time * trr IF = 0.5 A, IR = 1.0 A Irr = 0.25 A 20 35 tinu nan Thermal resistance (j-a) Rth(j-c) 3.0 M is con inte Thermal resistance (j-c) Rth(j-a) 63 /Dis , ma Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. ce pe 2. Absolute frequency of input and output is 10 MHz. D nan e ty 3. *: trr measurement circu...