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SSM40T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free, RoHS compliant.
D
BV DSS R DS(ON) ID
30V 25mΩ 28A
G S
DESCRIPTION
The SSM40T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM40T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. G G D S
TO-263 (S)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
D
TO-220(P)
S
Units V V A A A W W/°C
Rating 30 ±25 28 24 95 31 0.25
Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
°C °C
THERMAL DATA
Symbol
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Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient
Value 4 62
Units °C/W °C/W
RΘJC RΘJA
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SSM40T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.032
Max. Units 25 45 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
VGS=10V, ID=18A VGS=4.5V, ID=14A
15 8.8 2.5 5.8 6 62 16 4.4 655 145 95
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±25V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3Ω , VGS=10V RD=0.83Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 28 95 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25°C, IS=28A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width < 300us, duty cycle < 2%.
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90 75
T C =25 C ID , Drain Current (A)
o
10V 8 .0V ID , Drain Current (A)
T C =150 C
o
10V 8 .0V
60
6 .0V
50
6 .0V
30
25
V G = 4. 0V
V G =4.0V
0 0.0 1.0 2.0 3.0 4.0
0 0.0 1.0 2.0 3.0 4.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.0
I D =14A T C =25°C
50
I D =18A V G =10V Normalized RDS(ON)
1.4
RDS(ON) (mΩ )
30
0.8
10
0 5 10 15
0.2
-50
0
50
100
150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
2.5
100
2.0 10
T j =150 o C IS(A)
T j =25 o C VGS(th) (V)
1.5
1 1.0
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0.1 0 0.4 0.8 1.2 1.6 0.5 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C )
o
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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SSM40T03GP,S
f=1.0MHz
12 1000
I D =18A VGS , Gate to Source Voltage (V)
9
C iss V DS =10V V DS =15V V DS =20V
C (pF)
6
100
C oss C rss
3
0 0 3 6 9 12
10 1 8 15 22 29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
Normalized Thermal Response (Rthjc)
0.2
ID (A)
100us
10
0.1
0.1
0.05
0.02 0.01 Single Pulse
PDM
1ms T C =25 C Single Pulse
o
t T
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
10ms 100ms DC
10 100
1 0.1 1
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS www.DataSheet4U.com td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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