SSM40T03GJ

SSM40T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. D BV DSS R DS(ON) ID 30V 25mΩ 28A G S DESCRIPTION The SSM40T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM40T03GJ in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. G D S G D S TO-252 (H) TO-251 (J) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 ± 25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA www.DataSheet4U.com Symbol Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Unit °C/W °C/W Rthj-c Rthj-a 2/16/2005 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM40T03GH,J ELECTRICAL CHARACTERISTICS @ Tj= 25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.032 Max. Units 25 45 3 1 25 ±100 ...