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K6R4004C1C-I Dataheets PDF



Part Number K6R4004C1C-I
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 1Mx4 Bit High Speed Static RAM
Datasheet K6R4004C1C-I DatasheetK6R4004C1C-I Datasheet (PDF)

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 2.

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K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. ICC 190mA 185mA 180mA Previous Isb 70mA Isb1 20mA ICC 160mA 150mA 140mA 130mA Current Isb 60mA Isb1 10mA Previous -0.5 to 7.0 Current -0.5 to Vcc+0.5 Mar. 27. 2000 Final 10ns 12ns 15ns 20ns 3.3 Added Extended temperature range www.DataSheet4U.com The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 3.0 March 2000 K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E 1M x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES • Fast Access Time 10,12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4004C1C-10 : 160mA(Max.) K6R4004C1C-12 : 150mA(Max.) K6R4004C1C-15 : 140mA(Max.) K6R4004C1C-20 : 130mA(Max.) • Single 5.0V ±10% Power Supply • TTL Compatible Inputs and Outputs • I/O Compatible with 3.3V Device • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Center Power/Ground Pin Configuration • Standard Pin Configuration K6R4004C1C-J : 32-SOJ-400 PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The K6R4004C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004C1C is packaged in a 400 mil 32-pin plastic SOJ. PIN CONFIGURATION(Top View) A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 A19 A18 A17 A16 A15 OE ORDERING INFORMATION K6R4004C1C-C10/C12/C15/C20 K6R4004C1C-E10/E12/E15/E20 K6R4004C1C-I10/I12/I15/I20 Commercial Temp. Extended Temp. Industrial Temp. A1 A2 A3 A4 CS I/O1 26 I/O4 FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1 ~I/O4 Vcc Vss I/O2 SOJ 25 24 Vss Vcc 23 I/O3 22 21 20 19 18 A14 A13 A12 A11 A10 Pre-Charge Circuit WE A5 A6 Row Select A7 Memory Array 1024 Rows 1024 x 4 Columns A8 A9 17 N.C Data Cont. CLK Gen. I/O Circuit Column Select PIN FUNCTION Pin Name A0 - A19 WE Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection A10 A12 A14 A16 A18 A11 A13 A15 A17 A19 CS OE I/O1 ~ I/O4 CS www.DataSheet4U.com WE OE VCC VSS N.C -2- Rev 3.0 March 2000 K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Extended Industrial Symbol VIN, VOUT VCC PD TSTG TA TA TA Rating -0.5 to VCC+0.5 -0.5 to 7.0 1.0 -65 to 150 0 to 70 -25 to 85 -40 to 85 PRELIMINARY CMOS SRAM Unit V V W °C °C °C °C * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.2 -0.5** Typ 5.0 0 Max 5.5 0 VCC+0.5*** 0.8 Unit V V V V * The above parameters are also guaranteed at extended and industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA. *** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA. DC AND OPERATING CHARACTERISTICS* (TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC VIN=VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Com. 10ns 12ns 15ns 20ns Ext. Ind. 10ns 12ns 15ns 20ns St.


K6R4004C1C-C K6R4004C1C-I K6R4004C1C-E


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