SBP13007D

SBP13007D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol RθJC RθJA www.DataSheet4U.com Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.67 62.5 Units ℃/W ℃/W Oct 2008. Rev. 0 Copyright @ Semiwell Semiconductor Co.,Ltd.,All rights reserved. 1/4 SBP13007D Electrical Characteristics (TC=25℃ Symbol ICEV VCEO(SUS) Parameter Colletor Cut-off Current ( VBE = -1.5V ) Collector-Emitter Sustaining Voltage unless otherwise noted) Value Test Conditions VCE = 700V VCE = 700V ,TC = 100℃ IB = 0, IC = 10mA IC =2.0A, IB = 0.4A Min 400 Typ Max 1.0 5.0 0.6 1.5 3.0 10 10 1.2 1.6 40 30 3.6 1.6 2.5 Units mA V VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0A, IB = 1.0A IC = 8.0A, IB = 2.0A...