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SBP13007-H2 Dataheets PDF



Part Number SBP13007-H2
Manufacturers SemiWell Semiconductor
Logo SemiWell Semiconductor
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet SBP13007-H2 DatasheetSBP13007-H2 Datasheet (PDF)

SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical [email protected]/1.0A) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply. TO-220 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO .

  SBP13007-H2   SBP13007-H2



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SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical [email protected]/1.0A) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply. TO-220 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 8.0 16 4.0 8.0 80 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA www.DataSheet4U.com Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 1.56 62.5 Units °C/W °C/W Oct, 2002. Rev. 2 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 SBP13007-H2 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 2.0A IC = 5.0A IC = 8.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = 2.0A IB = 1.0A TC = 100 °C IB = 0.4A IB = 1.0A IB = 1.0A TC = 100 °C VCE = 5V VCE = 5V VCC = 125V IB2 = - 1.0A TC = 100 °C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.5 1.0 2.5 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.0A IC = 5.0A IC = 5.0A - - 1.2 1.6 1.5 V hFE DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time IC = 2.0A IC = 5.0A IC = 5.0A IB1 = 1.0A TP = 25㎲ VCC = 15V IB1 = 1.0A LC = 0.35mH VCC = 15V IB1= 1.0A LC = 0.35mH 10 5 - 40 40 ts tf - 1.5 0.17 3.0 0.4 ㎲ ts tf IC = 5.0A IB2 = -2.5A Vclamp = 300V IC = 5.0A IB2 = -2.5A Vclamp = 300V TC = 100 °C - 0.8 0.06 2.0 0.12 ㎲ ts tf - 1.0 0.07 3.0 0.15 ㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% www.DataSheet4U.com 2/6 SBP13007-H2 Fig 1. Static Characteristics 12 IB = 2000mA IB = 1600mA IB = 1200mA 8 IB = 1000mA IB = 800mA 6 IB = 600mA IB = 400mA 4 IB = 200mA 45 40 35 Fig 2. DC Current Gain 10 IC, Collector Current [A] hFE, DC Current Gain 30 25 20 15 TJ = 125 C TJ = 25 C o o ※ Notes : 10 5 2 IB = 0mA 0 0 1 2 3 4 5 6 7 8 9 10 0 0.01 VCE = 5V VCE = 1V 0.1 1 10 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 1.2 10 1.1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1.


SBP13007-H1 SBP13007-H2 SBP13007-O


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