SemiWell Semiconductor
SBP13007-H2
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical
[email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical
[email protected]/1.0A) - Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
c
○
3.Emitter
General Description
This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature
Value
700 400 9.0 8.0 16 4.0 8.0 80 - 65 ~ 150 150
Units
V V V A A A A W °C °C
Thermal Characteristics
Symbol
RθJC RθJA www.DataSheet4U.com
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Value
1.56 62.5
Units
°C/W °C/W
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
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SBP13007-H2
Electrical Characteristics
Symbol
ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted )
Parameter
Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 )
Condition
VCE = 700V VCE = 700V IC = 10 mA IC = 2.0A IC = 5.0A IC = 8.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = 2.0A IB = 1.0A TC = 100 °C IB = 0.4A IB = 1.0A IB = 1.0A TC = 100 °C VCE = 5V VCE = 5V VCC = 125V IB2 = - 1.0A TC = 100 °C
Min
-
Typ
-
Max
1.0 5.0
-
Units
mA
400
-
V
VCE(sat)
Collector-Emitter Saturation Voltage
-
-
0.5 1.0 2.5 2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2.0A IC = 5.0A IC = 5.0A
-
-
1.2 1.6 1.5
V
hFE
DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time
IC = 2.0A IC = 5.0A IC = 5.0A IB1 = 1.0A TP = 25㎲ VCC = 15V IB1 = 1.0A LC = 0.35mH VCC = 15V IB1= 1.0A LC = 0.35mH
10 5
-
40 40
ts tf
-
1.5 0.17
3.0 0.4
㎲
ts tf
IC = 5.0A IB2 = -2.5A Vclamp = 300V IC = 5.0A IB2 = -2.5A Vclamp = 300V TC = 100 °C
-
0.8 0.06
2.0 0.12
㎲
ts tf
-
1.0 0.07
3.0 0.15
㎲
※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%
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SBP13007-H2
Fig 1. Static Characteristics
12 IB = 2000mA IB = 1600mA IB = 1200mA 8 IB = 1000mA IB = 800mA 6 IB = 600mA IB = 400mA 4 IB = 200mA
45 40 35
Fig 2. DC Current Gain
10
IC, Collector Current [A]
hFE, DC Current Gain
30 25 20 15
TJ = 125 C TJ = 25 C
o
o
※ Notes :
10 5
2 IB = 0mA 0 0 1 2 3 4 5 6 7 8 9 10
0 0.01
VCE = 5V VCE = 1V
0.1 1 10
VCE, Collector-Emitter Voltage [V]
IC, Collector Current [A]
Fig 3. Collector-Emitter Saturation Voltage
1.2 10 1.1
Fig 4. Base-Emitter Saturation Voltage
VCE, Collector-Emitter Voltage [V]
VBE, Base-Emitter Voltage [V]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1.