BAS3010S

BAS3010S... Low VF Schottky Diode Forward current: 1 A Reverse voltage: 30 V Low forward voltage and smallest package form factor (1.0 x 0.6 x < 0.4 mm) for mobile phone battery charger application Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BAS3010S-03LRH 2 3 1 Type BAS3010S-03LRH* * Preliminary data Package TSLP-3-7 Configuration single Marking 1S Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage2) Forward current2)3) Repetitive peak forward current3) (tp ≤ 1 ms, D ≤ 0.25) Non-repetitive peak surge forward current3) (t ≤ 10 ms) Junction temperature Operating temperature range www.DataSheet4U.com Storage temperature 1Pb-containing 2For 3Only Symbol VR IF IFRM IFSM Tj Top Tstg Value 30 1 3.5 5 150 -55 ... 125 -65 ... 150 Unit V A °C package may be available upon special request TA > 25°C the derating of VR and IF has to be considered. valid if pin 1 and 2 are connected in parallel 1 2007-08-16 BAS3010S... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 38 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 100 mA IF = 350 mA IF = 1000 mA VF 340 400 570 15 30 300 390 450 650 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1For CT - 10 15 pF calculation of RthJA please refer to A...