BAS3010A...
Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (ty...
BAS3010A...
Medium Power AF
Schottky Diode Forward current: 1 A Reverse voltage: 30 V Very low forward voltage (typ. 0.41V @ I F = 1A) For high efficiency DC/DC conversion, fast switching, protection and clamping applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101
BAS 3010A-03W
Type BAS3010A-03W
Parameter Diode reverse voltage2) Forward current 2)
Package SOD323
Configuration single
Symbol VR IF Value 30 1 1 3.5 10 150 -65 ... 125 -65 ... 150
Marking 4/ blue
Unit V A
Maximum Ratings at TA = 25°C, unless otherwise specified
Average rectified forward current (50/60Hz, sinus) I FAV Repetitive peak forward current I FRM (tp ≤ 1 ms, D ≤ 0.5) Non-repetitive peak surge forward current (t ≤ 10ms) Junction temperature Operating temperature www.DataSheet4U.com Storage temperature
1Pb-containing 2For
I FSM Tj
°C
range
T op T stg
package may be available upon special request TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
1
2007-04-10
BAS3010A...
Thermal Resistance Parameter Junction - soldering point 1)
Symbol RthJS
Value ≤ 82
Unit K/W Unit
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 170 220 290 350 410 220 270 340 410 470 5 10 40 25 50 200
µA
mV
AC Characteristics Diode capa...