TBB1012

TBB1012 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1245-0200 Rev.2.00 Aug 22, 2006 Features Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction. Suitable for World Standard Tuner RF amplifier. High gain Low noise Low output capacitance Power supply voltage: 5 V Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. Marking is “MM“. 2. TBB1012 is individual type number of Renesas TWIN BBFET. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Symbol VDS VG1S VG2S Ratings 6 +6 –0 +6 –0 30 250 150 –55 to +150 Unit V V V mA mW °C °C Drain current ID Channel power dissipation PchNote3 Channel temperature Tch Storage temperature Tstg Notes: 3. Value on the glass epoxy board (50mm × 40mm × 1mm). www.DataSheet4U.com Rev.2.00 Aug 22, 2006 page 1 of 13 TBB1012 Electrical Characteristics FET1 (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off...