FGL40N150D
IGBT
FGL40N150D
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduc...
FGL40N150D
IGBT
FGL40N150D
General Description
Fairchild’s Insulated Gate Bipolar
Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications.
Features
High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G C E
TC = 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C
FGL40N150D 1500 ± 25 40 20 120 10 100 200 80 -55 to +150 -55 to +150 300
Units V V A A A A A W W °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
www.DataSheet4U.com
Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.625 0.83 25 Units °C/W °C/W °C/W
©2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1
FGL...