N-Channel MOSFET
N-Channel 100 V (D-S) MOSFET
SiR870DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0060 at VGS = 10 V
10...
Description
N-Channel 100 V (D-S) MOSFET
SiR870DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0060 at VGS = 10 V
100
0.0064 at VGS = 7.5 V
0.0078 at VGS = 4.5 V
ID (A)a 60 60 60
Qg (Typ.) 26.7 nC
PowerPAK® SO-8
6.15 mm
S
1
S
5.15 mm
2 S
3
G
4
D
8
D
7 D
6 D
5
Bottom View
Ordering Information:
SiR870DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® Power MOSFET
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Fixed Telecom
D
DC/DC Converter
Primary and Secondary Side
Switch
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
TC = 25 °C
60a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
60a 22.8b, c
Pulsed Drain Current
TA = 70 °C
18.2b, c
A
IDM
100
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
60a 5.6b, c
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L =0.1 mH
IAS
35
EAS
61
mJ
TC = 25 °C
104
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
66.6 6.25b, c
W
TA = 70 °C
4b, c
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (D...
Similar Datasheet