SIA429DJT

New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.0205 at VGS = - 4.5 V - 20 0.027 at VGS = - 2.5 V 0.036 at VGS = - 1.8 V 0.060 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -4 24.5 nC Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Ultra-Thin 0.6 mm height - Low On-Resistance 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Thin PowerPAK SC-70-6L-Single 0. m 6m Load Switch and Charger Switch for Portable Devices DC/DC Converter S D 1 6 D D 2 5 D G 3 4 S S Marking Code G BPX Part # code XXX Lot traceability and Date code D Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ±8 - 12a - 10.6b, c - 8.5b, c - 30 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 12a Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient www.Da...