IPW90R800C3

IPW90R800C3 CoolMOS™ Power Transistor Features Lowest figure-of-merit R ON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 0.8 42 V Ω nC PG-TO247 CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type IPW90R800C3 Package PG-TO247 Marking 9R800C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness www.DataSheet4U.com Gate source voltage Value 6.9 4.4 15 157 0.46 1.4 Unit A I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C I D=1.4 A, V DD=50 V I D=1.4 A, V DD=50 V mJ A V/ns V V DS=0...400 V static AC (f>1 Hz) 50 ±20 ±30 104 -55 ... 150 Power dissipation Operating and storage temperature Mounting torque Rev. 1.0 P tot T J, T stg T C=25 °C W °C Ncm 2008-07-29 M3 and M3.5 screws page 1 60 Please note the new package dimensions arccording to PCN 2009-134-A IPW90R800C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse...