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IPW60R045CP Dataheets PDF



Part Number IPW60R045CP
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description CoolMOS Power Transistor
Datasheet IPW60R045CP DatasheetIPW60R045CP Datasheet (PDF)

IPW60R045CP CoolMOS® Power Transistor Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V Ω nC PG-TO247-3-1 CoolMOS CP is specially designed for: • Hard switching SMPS topologies Type IPW60R045CP Package PG-TO247-3-1 Ordering Code SP000067149 Marking 6R045 Maxim.

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IPW60R045CP CoolMOS® Power Transistor Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V Ω nC PG-TO247-3-1 CoolMOS CP is specially designed for: • Hard switching SMPS topologies Type IPW60R045CP Package PG-TO247-3-1 Ordering Code SP000067149 Marking 6R045 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness www.DataSheet4U.com Gate source voltage Value 60 38 230 1950 3 11 Unit A I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V mJ A V/ns V V DS=0...480 V static AC (f >1 Hz) 50 ±20 ±30 431 -55 ... 150 Power dissipation Operating and storage temperature Mounting torque Rev. 2.2 P tot T j, T stg T C=25 °C W °C Ncm 2008-01-21 M3 and M3.5 screws page 1 60 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R045CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 44 230 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.29 62 K/W T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=3 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance www.DataSheet4U.com 600 2.5 - 3 - 3.5 10 V µA - 50 0.04 100 0.045 nA Ω I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=44 A, T j=25 °C V GS=10 V, I D=44 A, T j=150 °C - 0.11 1.3 Ω Gate resistance RG f =1 MHz, open drain Rev. 2.2 page 2 2008-01-21 Please note the new package dimensions arccording to PCN 2009-134-A IPW60R045CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t.


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