Document
IPW60R045CP
CoolMOS® Power Transistor
Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V Ω nC
PG-TO247-3-1 CoolMOS CP is specially designed for: • Hard switching SMPS topologies
Type IPW60R045CP
Package PG-TO247-3-1
Ordering Code SP000067149
Marking 6R045
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness
www.DataSheet4U.com Gate source voltage
Value 60 38 230 1950 3 11
Unit A
I D,pulse E AS E AR I AR dv /dt V GS
T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V
mJ
A V/ns V
V DS=0...480 V static AC (f >1 Hz)
50 ±20 ±30 431 -55 ... 150
Power dissipation Operating and storage temperature Mounting torque Rev. 2.2
P tot T j, T stg
T C=25 °C
W °C Ncm 2008-01-21
M3 and M3.5 screws page 1
60
Please note the new package dimensions arccording to PCN 2009-134-A
IPW60R045CP
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 44 230 15 V/ns Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.29 62 K/W
T sold
-
-
260
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=3 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance
www.DataSheet4U.com
600 2.5 -
3 -
3.5 10
V
µA
-
50 0.04
100 0.045 nA Ω
I GSS R DS(on)
V GS=20 V, V DS=0 V V GS=10 V, I D=44 A, T j=25 °C V GS=10 V, I D=44 A, T j=150 °C
-
0.11 1.3
Ω
Gate resistance
RG
f =1 MHz, open drain
Rev. 2.2
page 2
2008-01-21
Please note the new package dimensions arccording to PCN 2009-134-A
IPW60R045CP
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t.