SIHLU120

www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 12 0.27 3.0 7.1 Single FEATURES Dynamic dV/dt rating Repetitive avalanche rated Surface-mount (IRLR120, SiHLR120) Straight lead (IRLU120, SiHLU120) Available in tape and reMel Logic-level gate drive Available RDS(on) specified at VGS = 4 V and 5 V Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHLR120-GE3 IRLR120PbF-BE3 Lead (Pb)-free IRLR120PbF Note a. See device orientation DPAK (TO-252) SiHLR120TRL-GE3 IRLR120TRLPbF-BE3 IRLR120TRLPbF a DPAK (TO-252) SiHLR120TR-GE3 IRLR120TRPbF-BE3 IRLR120TRPbF a DPAK (TO-252) SiHLR120TRR-GE3 IRLR120TRRPbF a IPAK (TO-251) SiHLU120-GE3 - ABSOLUTE MAXIMUM RATINGS (TC = 25...