HERMETIC SILICON PHOTOTRANSISTOR
L14G1
PACKAGE DIMENSIONS
0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52)
L14G2
L...
HERMETIC SILICON PHOTO
TRANSISTOR
L14G1
PACKAGE DIMENSIONS
0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52)
L14G2
L14G3
0.030 (0.76) NOM
0.255 (6.47) 0.225 (5.71)
0.500 (12.7) MIN
0.100 (2.54) 0.050 (1.27)
SCHEMATIC
2 1 0.038 (0.97) 0.046 (1.16) 0.036 (0.92) 45° Ø0.020 (0.51) 3X 3
(CONNECTED TO CASE) COLLECTOR 3
BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 EMITTER
DESCRIPTION
The L14G1/L14G2/L14G3 are silicon photo
transistors mounted in a narrow angle, TO-18 package.
FEATURES
Hermetically sealed package Narrow reception angle
2001 Fairchild Semiconductor Corporation DS300307 6/01/01
1 OF 4
www.fairchildsemi.com
HERMETIC SILICON PHOTO
TRANSISTOR
L14G1
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD
L14G2
L14G3
Unit °C °C °C °C V V V mW mW
Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 45 5 300 600
NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommen...