Document
HERMETIC SILICON PHOTOTRANSISTOR
L14C1
PACKAGE DIMENSIONS
0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52)
L14C2
0.030 (0.76) MAX
0.210 (5.34) MAX
0.500 (12.7) MIN
0.100 (2.54) 0.100 (2.54) DIA. 2 1 0.038 (.97) NOM 0.046 (1.16) 0.036 (0.92) 45° Ø0.021 (0.53) 3X 3 0.050 (1.27)
SCHEMATIC
(CONNECTED TO CASE) COLLECTOR 3
BASE 2
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
1 EMITTER
DESCRIPTION
The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package.
FEATURES
• Hermetically sealed package • Wide reception angle
2001 Fairchild Semiconductor Corporation DS300305 6/01/01
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HERMETIC SILICON PHOTOTRANSISTOR
L14C1
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 50 50 7 300 600
L14C2
Unit °C °C °C °C V V V mW mW
NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
(TA =25°C) (All measurements made under pulse conditions)
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14C1 On-State Collector Current L14C2 On-State Collector Current L14C2 Turn-On Time Turn-Off Time Saturation Voltage
IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 20 V, Ee = 0 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 1.0 mW/cm2, VCE = 5 V(7,8) IC = 2 mA, VCC = 10 V, RL =100 Ω IC = 2 mA, VCC = 10 V, RL =100 Ω IC = 0.40 mA, Ee = 6.0 mW/cm2(7,8)
BVCEO BVEBO BVCBO ICEO θ IC(ON) IC(ON) IC(ON) ton toff VCE(SAT)
50 7.0 50 — ±40 .16 .08 .16 5 5 —
— — — 100 — — —
0.40
V V V nA Degrees mA mA mA µs µs V
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HERMETIC SILICON PHOTOTRANSISTOR
L14C1
Figure 1. Light Current vs. Collector to Emitter Voltage
10 IL, NORMALIZED LIGHT CURRENT Ee = 20 mW/cm2 Ee = 10 mW/cm2 1.0 Ee = 5 mW/cm2 Ee = 2 mW/cm2 0.1 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 10 10
L14C2
Figure 2. Normalized Light Current vs. Radiation
II, NORMALIZED LIGHT CURRENT
1.0 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 0.1
.01 0.1
1.0
100
.01 .01
1.0
10
100
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
Ee - TOTAL IRRADIANCE IN mW/cm2
ton and toff, NORMALIZED TURN ON AND TURN OFF TIMES
Figure 3. Dark Current vs. Temperature
1000 100 ID, DARK CURRENT (µA) 10 1.0 0.1 .01 .001 VCE = 20 V Ee = 0 mW/cm2
Figure 4. Switching Speed vs. Output Current
10
RL = 1KΩ
1.0 NORMALIZED TO: VCE = 10 V I C = 2 mA ton = toff = 5 µsec R L = 100 Ω .01 1 1.0 IC, OUTPUT CURRENT (mA) 10
RL = 100Ω RL = 10Ω
0
25
50
75
100
125
150
100
T, TEMPERATURE (°C)
Figure 5. Spectral Response
1.0 0.9 0.8 RELATIVE RESPONSE 0.7 RELATIVE OUTPUT (%) 0.6 0.5 0.4 0.3 0.2 0.1 0 500 600 700 800 900 1000 1100 130 120 110 100 90 80 70 60 50 40 30 20 10 -60
Figure 6. Angular Response Curve
-40
-20
0
20
40
60
λ, WAVE LENGTH (NANOMETERS)
θ, ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
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HERMETIC SILICON PHOTOTRANSISTOR
L14C1
L14C2
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