IPA60R199CP

CoolMOS® Power Transistor Features Lowest figure-of-merit RONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ IPA60R199CP 650 V 0.199 Ω 32 nC PG-TO220 CoolMOS CP is designed for: Hard switching SMPS topologies Type IPA60R199CP Package PG-TO220 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current2) Pulsed drain current3) Avalanche energy, single pulse Symbol Conditions I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=6.6 A, V DD=50 V Avalanche energy, repetitive t 3),4) AR E AR I D=6.6 A, V DD=50 V Avalanche current, repetitive t 3),4) AR I AR MOSFET dv /dt ruggedness dv /dt V DS=0...480 V Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Mounting torque M2.5 screws Rev. 2.2 Rev. 2.3 page 1 Page 1 Value 16 10 51 436 0.66 6.6 50 ±20 ±30 34 -55 ... 150 50 Unit A mJ A V/ns V W °C Ncm 2011-12-20 2018-02-14 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current2) Diode pulse current3) Reverse diode dv /dt 5) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPA60R199CP Value 16 51 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, ju...