IPA50R350CP

IPA50R350CP CoolMOSTM Power Transistor Features Lowest figure of merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Pb-free lead plating; RoHS compliant Quailfied according to JEDEC0) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.350 19 V Ω nC TO220 Full PAK CoolMOS CP is designed for: Hard and softswitching SMPS topologies CCM PFC for Notebook adapter, PDP and LCD TV PWM for Notebook adapter, PDP and LCD TV Type IPA50R350CP Package PG-TO220FP Marking 5R350P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage www.DataSheet4U.com Power dissipation Operating and storage temperature Mounting torque I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) P tot T j, T stg M2.5 screws T C=25 °C T C=25 °C I D=3.7 A, V DD=50 V I D=3.7 A, V DD=50 V Value 10 6 22 246 0.37 3.7 50 ±20 ±30 32 -55 ... 150 60 W °C Ncm A V/ns V mJ Unit A Rev. 2.1 page 1 2009-07-23 IPA50R350CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 1) Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 5.6 22 15 V/ns Unit A Parameter Symbol Condit...