P-Channel Enhancement Mode Field Effect Transistor FEATURES
-40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED4201/CEU4201
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-2...
