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CED01N65

Chino-Excel Technology
Part Number CED01N65
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cel...
Datasheet PDF File CED01N65 PDF File

CED01N65
CED01N65

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.
2A, RDS(ON) = 10.
5Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED01N65/CEU01N65 PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 650 Units V V A A W W/ C C ±30 1.
2 4.
8 35.
7 0.
29 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Tem...


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