CET4435A

CET4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D D G SOT-223 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -8.8 -35 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W www.DataSheet4U.com Specification and data are subject to change without notice . 7 - 42 Rev 1. 2006.January http://www.cetsemi.com CET4435A Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS...