N-Channel Enhancement Mode Field Effect Transistor FEATURES
500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED830G/CEU830G
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSO...
