SBW13009-0

www.DataSheet4U.com SBW13009-0 High voltage Fast Switching NPN Power Transistor Features � � � Very High Switching Speed High voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as system,switching mode power supply. lighting Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 Value 700 400 9.0 12 25 6.0 Units V V V A A A A W ℃ ℃ tP=5ms 12 110 -40~150 -40~150 Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.13 62.5 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. www.DataSheet4U.com SBW13009-0 Electrical Characteristics Symbol VCEO(sus) Parameter Collector-Emitter Breakdown Voltage Test conditions Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A Value Min 400 Typ - Max 1.0 Units V - - 1.5 3.0 V VCE(sat) Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A - 2.0 1.2 V V 1.6 VBE(sat) Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Tc=100℃ 10 6 4 4 1.5 10 40 30 10 0.8 V uA IEBO hFE ts...