Silicon MOSFET
Intelligent Power Devices (IPDs)
MIP514
Silicon MOSFET type Integrated Circuit
I Features
• Built-in five protection fu...
Description
Intelligent Power Devices (IPDs)
MIP514
Silicon MOSFET type Integrated Circuit
I Features
Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD) Both DC and AC power suply are available
(0.7) 6.9±0.1 (4.0)
Unit: mm
2.5±0.1 (0.8)
(1.0) (0.2) 4.5±0.1
I Applications
Lamp, solenoid drive Motor drive
0.65 max.
(1.0)
I Absolute Maximum Ratings Ta = 25°C ± 3°C
Parameter Output voltage Output current Input voltage Input current Drain clamp energy endurance Power dissipation * Operating ambient temperature Channel temperature Storage temperature Symbol VDS IO VIN IIN ECLP PD Topr Tch Tstg Rating − 0.5 to +45 2.0 − 0.5 to +6.0 ±5 28 1.0 −40 to +85 150 −55 to +150 Unit V A V mA mJ W °C °C °C
1 2 3 0.45+0.10 –0.05 2.5±0.5 2.5±0.5
14.5±0.5
1.05±0.05
0.45+0.10 –0.05
1: In 2: Drain 3: Source MT-2-A1 Package
Marking Symbol: MIP514
Note) *: Mounting on the PCB (100 mm × 100 mm, glass epoxy substrate) (Ta = 25°C).
I Block Diagram
Drain
2
Over-current protection Load short-circuit protection
In 1
Gate cut-off circuit
www.DataSheet4U.com
ESD protection
Over-heat protection
Over-voltage protection 3 Source
(0.5)
Publication date: April 2002
SLB00046AED
1
MIP514
I Electrical Characteristics TC = 25°C ± 3°C
Parameter On-state resistance Drain-source voltage Drain clamp voltage Drain-off current 1 Drain-off current 2 Drain-off current 3 Input threshold voltage High-level input voltage Low-level input voltage Input current ...
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