SILICON EPITAXIAL PLANAR SWITCHING DIODE
MMBD204SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
3
Applications • Ultra high speed switching
1 2
Marking Code: A7
...
Description
MMBD204SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
3
Applications Ultra high speed switching
1 2
Marking Code: A7
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Pd TJ Ts
Value 20 20 100 200 300 200 150 - 55 to + 150
Unit V V mA mA mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 15 V Capacitance between Terminals at VR = 6, f = 1 MHz Symbol VF IR CT Max. 1 0.1 4 Unit V µA pF
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
MMBD204SEW
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
...
Similar Datasheet