MA726

Schottky Barrier Diodes (SBD) MA4X726 (MA726) Silicon epitaxial planar type For super high speed switching For small current rectification I Features Two isolated elements are contained in one package, allowing high-density mounting Two MA3X721 (MA721) is contained in one package (two diodes in a different direction) IF(AV) = 200 mA rectification is possible Mini type 4-pin package 2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 3 4 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.1 –0.06 0.5R 2 (0.2) 0.60+0.10 –0.05 10° 1 (0.65) 5° +0.2 0 to 0.1 1.1–0.1 Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive peak Single Double *1 Single Double *1 Single Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 225 200 150 1 0.75 150 −55 to +150 Unit V V mA Marking Symbol: M1O mA Internal Connection A °C °C 2 1 3 4 forward-surge-current *2 Double *1 Junction temperature Storage temperature Note) *1: Value per chip *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3.0 Conditions Min Typ Max 50 0.55 Unit µA V pF ns www.DataSheet4U.com Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be pa...