PJSD05LCFN2

PJSD05LCFN2 BI-DIRECTIONAL ESD PROTECTION DIODE This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEA TURES 40W Power Dippsipation (8/20s Waveform) Low Leakage Current, Maximum of 1 A@5Vdc Very low Clamping voltage IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance In compliance with EU RoHS 2002/95/EC directivess Terminals : Solderable per MIL-STD-750, Method 2026 Marking : BY 2 7 5 4 DFN 2L Unit : inch(mm) Case : DFN 2L, Plastic MAX. APPLICATIONS Video I/O ports protection Set Top Boxes Portable Instrumentation 3 2 0.008(0.22) PIN NO.1 IDENTIFICATION MAXIMUM RA TINGS Rating Peak Pulse Power (8/20 s Waveform) Peak Pulse Current (8/20 s Waveform) ESD Voltage (HBM) Op e ra t i ng J unc t i o n a nd S to r a g e Te mp e r a tur e Ra ng e Symbol Value 40 4 >25 -55 to +150 2 47 5 4 Units W A kV O PPP I PPM VESD T J ,T S TG C ELECTRICAL CHARACTERISTICS (T A=25oC) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol VWRM V BR IR VC CJ Conditions Min. - Typ. - Max. 5.0 7.82 1.0 10 15 Units V V A V pF I BR =1mA VR=5V I PP =4A 0 Vdc Bias f=1MHz 5.78 - www.DataSheet4U.com Reverse Leakage Current Clamping Voltage (8/20s) Off State Junction Capacitance PAN JIT RESERVES THE RIGHT TO IMPROVE PROD...