BI-DIRECTIONAL TVS
PJSD05CFN2
BI-DIRECTIONAL TVS
This bi-directional TVS has been designed to protect sensitive equipment against ESD and t...
Description
PJSD05CFN2
BI-DIRECTIONAL TVS
This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium.
SPECIFICATION FEA TURES
200W Power Dissipation (8/20s Waveform) Low Leakage Current, Maximum of 1 A@5Vdc Very low Clamping voltage IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance In compliance with EU RoHS 2002/95/EC directives Terminals : Solderable per MIL-STD-750, Method 2026 Case : DFN 2L, Plastic Marking : BT
2 7 5 4
DFN 2L
Unit : inch(mm)
APPLICATIONS
Video I/O ports protection Set Top Boxes Portable Instrumentation
2 47 5 4
3 2 0.008(0.22)
MAX.
PIN NO.1 IDENTIFICATION
MAXIMUM RA TINGS
Rating Peak Pulse Power (8/20 s Waveform) Maximum Peak Pulse Current (8/20 s Waveform) ESD Voltage (HBM) Op e ra ti ng J unc ti o n a nd S to r a g e Te m p e r a ture R a ng e Symbol Value 200 18 >25 -55 to +150 Units W A kV
O
PPP I PPM VESD
T J ,T S TG
C
ELECTRICAL CHARACTERISTICS (T A=25oC)
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol VWRM VBR IR VC VC CJ CJ I BR =1mA VR=5V I PP =5A I PP =15A 0 Vdc Bias f=1MHz 5 Vdc Bias f=1MHz Conditions Min. 6 Typ. Max. 5.0 1.0 11 14 70 60 Units V V A V V pF pF
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Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Off State Junc...
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