Document
PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE
FEATURES
• 120 Watts peak pules power( tp=8/20μs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage current • In compliance with EU RoHS 2002/95/EC directives
3~36 Volts
POWER
120 Watts
APPLICATIONS
• Case: SOD-523 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx Weight: 0.0014 grams • Marking : PJSD03TS : KD PJSD05TS : KE PJSD07TS : KF PJSD08TS : KR PJSD12TS : LE PJSD15TS : LM PJSD24TS : LZ PJSD36TS : MP
1 2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating Peak Pulse Power Dissipation (tp=8/20 μs) ESD Voltage Operating Temperature Storage Temperature Symbol PPP V ESD TJ TSTG Value 120 25 -50 to +150 -50 to +150 Units W KV
O
C C
O
ELECTRICALCHATACTERISTICS
PJSD03TS Parameter Reverse Stand-Off Voltage Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA V R=3.3V I PP=5A 0Vdc Bias=f=1MHz 3.3Vdc Bias=f=1MHz Min. 4 Typical Max. 3.3 200 6.5 200 100 Units V V μA V pF pF
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Reverse Breakdown Voltage
Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance
July 20.2010-REV.00
PAGE . 1
PJSD03TS~PJSD36TS
PJSD05TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=5V I PP=5A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6.0 Typical Max. 5 5 9 110 60 Units V V μA V pF pF
PJSD07TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ Conditions I BR=1mA VR=7V I PP=8.8A 0Vdc Bias=f=1MHz Min. 7.5 Typical Max. 7.0 150 22.7 85 Units V V nA V pF
PJSD08TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol V RWM VBR IR VC CJ Conditions I BR=1mA VR=8V I PP=5A 0Vdc Bias=f=1MHz Min. 8.5 Typical Max. 8 5 13 70 Units V V μA V pF
PJSD12TS Parameter Reverse Stand-Off Voltage Symbol VRWM VBR IR VC CJ Conditions I BR=1mA VR=12V I PP=5A 0Vdc Bias=f=1MHz Min. 13.3 Typical Max. 12 5 17 60 Units V V μA V pF
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Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance
July 20.2010-REV.00
PAGE . 2
PJSD03TS~PJSD36TS
PJSD15TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ Conditions I BR=1mA VR=15V I PP=5A 0Vdc Bias=f=1MHz Min. 16.6 Typical Max. 15 5 22 50 Units V V μA V pF
PJSD24TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off St.