Diode
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J104
Silicon epitaxial planar type
For high speed swi...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J104
Silicon epitaxial planar type
For high speed switching circuits Features Package
Code SMini2-F5-B Pin Name 1: Cathode 2: Anode
Small reverse current IR Low terminal capacitance Ct Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: C1
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature
Note) *: 1 t = 1 s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 200 600 1 150 –55 to +150
Unit V V mA mA A °C °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IF = 200 mA IR = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, Irr = 0.25 × IR 80 500 4 10 Conditions Min Typ 0.90 Max 1.10 Unit V V nA pF ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. *: trr measurement circuit
Bias Application Unit (N-50BU) Input Pulse tr 10% tp t IF Output Pulse
trr
t
A
VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
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