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DA2J104

Panasonic Semiconductor

Diode

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J104 Silicon epitaxial planar type For high speed swi...


Panasonic Semiconductor

DA2J104

File Download Download DA2J104 Datasheet


Description
This product complies with the RoHS Directive (EU 2002/95/EC). DA2J104 Silicon epitaxial planar type For high speed switching circuits  Features  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Small reverse current IR  Low terminal capacitance Ct  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: C1  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: 1 t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 200 600 1 150 –55 to +150 Unit V V mA mA A °C °C  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IF = 200 mA IR = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, Irr = 0.25 × IR 80 500 4 10 Conditions Min Typ 0.90 Max 1.10 Unit V V nA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tr 10% tp t IF Output Pulse trr t A VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 w...




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