IPB03N03LA G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to J...
IPB03N03LA G
OptiMOS®2 Power-
Transistor
Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target applications N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max (SMD version) ID 25 2.7 80 V mΩ A
PG-TO263-3-2
Type IPB03N03LA G
Package PG-TO263-3-2
Marking 03N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation www.DataSheet4U.com Operating and storage temperature IEC climatic category; DIN IEC 68-1
1)
Value 80 80 385 960 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C3) I D=80 A, R GS=25 Ω I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
150 -55 ... 175 55/175/56
J-STD20 and JESD22
Rev. 1.6
page 1
2006-05-10
IPB03N03LA G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V ...